雪崩二极管(APD)
产品名称： 雪崩二极管(APD)
英文名称： APD
产品编号： first sensor
产品价格： 0
产品产地： 德国
品牌商标： 雪崩二极管(APD)
更新时间： null
使用范围： null
杭州新势力光电技术有限公司
- 联系人 :
- 地址 : 中国浙江省杭州市西湖区西溪世纪中心2号楼828室
- 邮编 : 310030
- 所在区域 : 浙江
- 电话 : 153****7810 点击查看
- 传真 : 点击查看
- 邮箱 : Sales@NewOpto.com
雪崩二极管(APD)
新势力光电供应雪崩二极管(APD)，是一种内部增益机制的光电二极管。根据具体应用，可以选择：蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。
PIN Series
Special features for Applications
Series-11 Optimized for 360-560nm
Blue enhanced for analytical instruments, readout for scintillators.
Series-12 Optimized for 500-750nm
Flat frequency response up to 3GHz for precise distance meas., communication.
Series-8 Optimized for 750-820nm
High-speed for resistance meas., laser scanner, high speed applications.
Series-9 Optimized for 750-930nm
Low rise time for laser rangefinder, LIDAR, basic technology for arrays.
Series-10 Optimized for 860-1100nm
Sensitivity at 1064nm for range finder, laser tracker, LIDAR.
Series 11: Blue sensitivity enhanced (for biomedical applications)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
M=100
410nm 50Ω
mm
mm2
nA
ns
AD800-11
TO52S1
Ø0.8
0.5
1
1
AD1900-11
TO5i
Ø1.95
3
5
2
Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)
Type No.
Active area
Spectral Responsivity
Cut-off frequency
Chip
Package
Size
Area
660nm M=100
660nm 50Ω
mm
mm2
A/W
GHz
AD100-12
LCC6.1
Ø0.1
0.008
50
typ. 3, min. 2
AD100-12
LCC6.1f
Ø0.1
0.008
44
typ. 3, min. 2
AD100-12
TO52S1
Ø0.1
0.008
50
typ. 3, min. 2
AD230-12
LCC6.1
Ø0.23
0.042
50
typ. 3, min. 2
AD230-12
LCC6.1f
Ø0.23
0.042
44
typ. 3, min. 2
AD230-12
TO52S1
Ø0.23
0.042
50
typ. 3, min. 2
AD500-12
LCC6.1
Ø0.5
0.196
50
typ. 3, min. 2
AD500-12
LCC6.1f
Ø0.5
0.196
44
typ. 3, min. 2
AD500-12
TO52S1
Ø0.5
0.196
50
typ. 3, min. 2
Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
M=100
M=100 20V 50Ω
mm
mm2
nA
ns
AD100-8
LCC6.1
Ø0.1
0.008
0.05
<0.18
AD100-8
LCC6.1f
,
Ø0.1
0.008
0.05
<0.18
AD100-8
TO52S1
Ø0.1
0.008
0.05
<0.18
AD100-8
TO52S3
Ø0.1
0.008
0.05
<0.18
AD230-8
LCC6.1
Ø0.23
0.04
0.3
0.18
AD230-8
新势力光电供应雪崩二极管(APD)，是一种内部增益机制的光电二极管。根据具体应用，可以选择：蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。
|
PIN Series
|
Special features for Applications
|
|
Series-11 Optimized for 360-560nm
|
Blue enhanced for analytical instruments, readout for scintillators.
|
|
Series-12 Optimized for 500-750nm
|
Flat frequency response up to 3GHz for precise distance meas., communication.
|
|
Series-8 Optimized for 750-820nm
|
High-speed for resistance meas., laser scanner, high speed applications.
|
|
Series-9 Optimized for 750-930nm
|
Low rise time for laser rangefinder, LIDAR, basic technology for arrays.
|
|
Series-10 Optimized for 860-1100nm
|
Sensitivity at 1064nm for range finder, laser tracker, LIDAR.
|
|
Series 11: Blue sensitivity enhanced (for biomedical applications)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
410nm 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
AD800-11
|
TO52S1
|
Ø0.8
|
0.5
|
1
|
1
|
|
AD1900-11
|
TO5i
|
Ø1.95
|
3
|
5
|
2
|
|
Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)
|
|||||
|
Type No.
|
Active area
|
Spectral Responsivity
|
Cut-off frequency
|
||
|
Chip
|
Package
|
Size
|
Area
|
660nm M=100
|
660nm 50Ω
|
|
mm
|
mm2
|
A/W
|
GHz
|
||
|
AD100-12
|
LCC6.1
|
Ø0.1
|
0.008
|
50
|
typ. 3, min. 2
|
|
AD100-12
|
LCC6.1f
|
Ø0.1
|
0.008
|
44
|
typ. 3, min. 2
|
|
AD100-12
|
TO52S1
|
Ø0.1
|
0.008
|
50
|
typ. 3, min. 2
|
|
AD230-12
|
LCC6.1
|
Ø0.23
|
0.042
|
50
|
typ. 3, min. 2
|
|
AD230-12
|
LCC6.1f
|
Ø0.23
|
0.042
|
44
|
typ. 3, min. 2
|
|
AD230-12
|
TO52S1
|
Ø0.23
|
0.042
|
50
|
typ. 3, min. 2
|
|
AD500-12
|
LCC6.1
|
Ø0.5
|
0.196
|
50
|
typ. 3, min. 2
|
|
AD500-12
|
LCC6.1f
|
Ø0.5
|
0.196
|
44
|
typ. 3, min. 2
|
|
AD500-12
|
TO52S1
|
Ø0.5
|
0.196
|
50
|
typ. 3, min. 2
|
|
Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
M=100 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
AD100-8
|
LCC6.1
|
Ø0.1
|
0.008
|
0.05
|
<0.18
|
|
AD100-8
|
LCC6.1f
|
,
Ø0.1
|
0.008
|
0.05
|
<0.18
|
|
AD100-8
|
TO52S1
|
Ø0.1
|
0.008
|
0.05
|
<0.18
|
|
AD100-8
|
TO52S3
|
Ø0.1
|
0.008
|
0.05
|
<0.18
|
|
AD230-8
|
LCC6.1
|
Ø0.23
|
0.04
|
0.3
|
0.18
|
|
AD230-8
|
|||||